| 主权项 |
1. A semiconductor device having an element forming region and a guard ring region surrounding said element forming region in a plan view, comprising:
a guard ring including at the top thereof a topmost conductive layer for guard ring formed in said guard ring region to surround the circumference of said element forming region in said plan view; a passivation film formed in said guard ring region and said element forming region to cover said topmost conductive layer for guard ring; and a first photosensitive organic insulating film formed in contact with said passivation film, at a surface of said passivation film, a stepped portion being formed on an inner circumferential side to be the side of said element forming region with respect to said topmost conductive layer for guard ring, and because of said stepped portion, said surface of said passivation film on the inner circumferential side with respect to said topmost conductive layer for guard ring being lower than said surface of said passivation film directly over said topmost conductive layer for guard ring, said first photosensitive organic insulating film covering the entire circumference of said stepped portion in a plan view and having an outer circumferential edge positioned, along the entire circumference, on the outer circumferential side with respect to said stepped portion, said outer circumferential edge being positioned directly over said topmost conductive layer for guard ring. |
