| 发明名称 |
Method for cleaning contact hole and forming contact plug therein |
| 摘要 |
The method for cleaning a contact hole and forming a contact plug therein is provided. The method includes steps of: providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole; and forming a contact plug in the contact hole. The pre-cleaning process includes steps of: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process with a temperature which is equal to or greater than 300° C.; and performing an Ar-plasma etching process. |
| 申请公布号 |
US9312121(B1) |
申请公布日期 |
2016.04.12 |
| 申请号 |
US201414511092 |
申请日期 |
2014.10.09 |
| 申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
Lee Yi-Hui;Chang Tsung-Hung;Hung Ching-Wen;Wu Jia-Rong;Lin Ching-Ling;Huang Chih-Sen;Chen Yi-Wei;Hsu Chia-Chang;Huang Shu-Min;Huang Hsin-Fu |
| 分类号 |
H01L21/02;H01L21/768 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
Tan Ding Yu |
| 主权项 |
1. A method for cleaning a contact hole and forming a contact plug therein, the method comprising:
providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole, the pre-cleaning process including: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process for removing water and gas with a temperature ranging from 300° C.˜500° C.; and performing an Ar-plasma etching process; and forming a contact plug in the contact hole. |
| 地址 |
Hsinchu TW |
