Semiconductor package design providing reduced electromagnetic coupling between circuit components

摘要

A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier.

主权项

1. A semiconductor device package comprising:
a flange; a first set of circuit components mounted on the flange, wherein
a first circuit component and a second circuit component of the first set of circuit components are coupled by a first set of conductors,the first circuit component of the first set of circuit components comprises a transistor,the second circuit component of the first set of circuit components comprises a capacitor, andthe semiconductor device package comprises a Doherty power amplifier and the first set of circuit components comprises a carrier amplifier circuit; a second set of circuit components mounted on the flange, wherein
a first circuit component and a second circuit component of the second set of circuit components are coupled by a second set of conductors,the first circuit components of the first set of circuit components comprises a transistor,the second circuit component of the first set of circuit components comprises a capacitor, andthe second set of circuit components comprises a peaking amplifier circuit; and an electromagnetic isolation structure located between the first set of conductors and the second set of conductors, wherein
the electromagnetic isolation structure is adhesively coupled directly to the flange,the first set of conductors and the second set of conductors are bond wire arrays, andone or more conductors of the first set of conductors are located sufficiently close to the second set of conductors to induce a current in one or more conductor of the second set of conductors when a current is passed through the one or more conductor of the first set of conductors in the absence of the electromagnetic isolation structure wherein a height of the electromagnetic isolation structure is higher than the highest conductor of the first and second sets of conductors.