Small pitch patterns and fabrication method

摘要

A method is provided for fabricating small pitch patterns. The method includes providing a semiconductor substrate, and forming a target material layer having a first region and a second region on the semiconductor substrate. The method also includes forming a plurality of discrete first sacrificial layers on the first region of the target material layer and a plurality of discrete second sacrificial layers on the second region of the target material layer, and forming first sidewall spacers on both sides of the discrete first sacrificial layers and the discrete second sacrificial layers. Further, the method includes removing the first sacrificial layers and the second sacrificial layers, and forming second sidewall spacers. Further, the method also includes forming discrete repeating patterns in the first region of the target material layer and a continuous pattern in the second region of the target material layer.

主权项

1. A method for fabricating small pitch patterns device, comprising:
providing a semiconductor substrate; forming a target material layer having a first region and a second region; forming a plurality of discrete first sacrificial layers on one surface of the first region of the target material layer and a plurality of discrete second sacrificial layers on the surface of the second region of the target material layer, wherein:
widths of the first sacrificial layers are identical and defined as CDcore1, and the first sacrificial layers and spaces between two adjacent first sacrificial layers form a plurality of periodical patterns with a period of a first node distance defined as P1; andwidths of the second sacrificial layers are identical and defined as CDcore2, and the second sacrificial layers and spaces between two adjacent second sacrificial layers form a plurality of periodical patterns with a period of a second node distance defined as P2, wherein the first node distance P1 is greater than the second node distance P2; CDcore1<½P1; CDcore2 <½P2; and ½P1−CDcore1=½P2−CDcore2; forming first sidewall spacers on both sides of the discrete first sacrificial layers and the discrete second sacrificial layers; removing the first sacrificial layers and the second sacrificial layers; forming second sidewall spacers on both sides of each of the first sidewall spacers, wherein the first sidewall spacers and the second sidewall spacers form a plurality of discrete first mask layers on the first region of the target material layer and form a non-discrete second mask layer on the second region of the target material layer; and forming discrete repeating patterns in the first region of the target material layer and a non-discrete pattern in the second region of the target material layer.