POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of simultaneously achieving miniaturization and high vibration resistance.SOLUTION: A power semiconductor device comprises: a heat radiation member 13; a ceramic substrate 3; a power semiconductor element 5; and an electrode 7 for a main circuit taken out in an upper surface direction of the power semiconductor element. A frame member 11 is fixed onto a conductor layer of the ceramic substrate, and a convex part 14 for deciding a position of the electrode is provided on the frame member, and a recessed part 24 engaged with the convex part is provided on the electrode.SELECTED DRAWING: Figure 1A