| 摘要 |
PROBLEM TO BE SOLVED: To efficiently grow an AlN single crystal on a substrate by suppressing precipitation of a miscellaneous crystal on a solution surface in a method of manufacturing the AlN single crystal by a solution method.SOLUTION: An element X (including Fe) is used, which satisfies a condition in which the element X does not form a compound with either Al or N, or forms a compound with either Al or N gas, but standard free energy of formation of the compound is larger than that of AlN. A solution having a composition of Fe-X is used, which forms an unsaturated state and a supersaturated state in a growth temperature range of the AlN single crystal. Precipitation of the miscellaneous crystal on a solution surface is suppressed by making an upper part of the solution (solution surface) the unsaturated state, and growth of the AlN single crystal onto the substrate is promoted by making a lower part of the solution (a boundary between the solution and the substrate) supersaturated state.SELECTED DRAWING: Figure 3 |
