| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which prevent a thin film wiring layer which causes a foreign object and failure from being formed unintendedly in an interlayer insulation film.SOLUTION: A semiconductor device comprises a connection part C2 for connecting a first wiring layer M1 which consists primarily of copper, and a second wiring layer M2 which is arranged on a first diffusion prevention film ADL1 and consists primarily of copper. The first diffusion prevention film ADL1 includes a first opening region CV1 formed in a semiconductor circuit region which is a partial region in plan view and a second opening region MP formed as an opening region different from the first opening region CV1 in plan view. The opening regions CV1, MP are formed in regions different from an opening region formed for the connection part C2 to pierce the first diffusion prevention film ADL1. The semiconductor device further comprises: a mark wiring layer MC arranged right above the second opening region MP as a layer the same with the second wiring layer M2; and a second diffusion prevention film ADL2 arranged to contact a top face of the mark wiring layer MC.SELECTED DRAWING: Figure 5 |
