| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of improving characteristics of a semiconductor device having a MISFET and a non-volatile memory.SOLUTION: Above a gate electrode GE that configures a MISFET (LT) and a control gate electrode CG and a memory gate electrode MG that configure a memory cell MC, a stress application film 10 configured by a silicon nitride film is formed. An opening is formed by removing the silicon nitride film 10 above the control gate electrode CG and the memory gate electrode MG. Thereafter, in a state where the opening is formed on the silicon nitride film 10, heat treatment is performed to apply a stress to the MISFET (LT). By removing the stress application film (the silicon nitride film) 10 on the memory cell MC, deterioration in characteristics of the memory cell MC caused by H (hydrogen) in the silicon nitride film can be avoided.SELECTED DRAWING: Figure 15 |
