EPITAXIAL GROWTH METHOD AND GROWTH DEVICE, AND METHOD OF PRODUCING QUANTUM WELL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial growth method and growth device capable of achieving ultra-migration at a low temperature by utilizing the Leidenfrost phenomenon and of producing a high-quality thin film, to provide a quantum well structure consisting of an oxide semiconductor with a high-potential corundum structure, and to provide a semiconductor device including the quantum well structure.SOLUTION: Provided is an epitaxial growth method for forming an epitaxial layer on a base substance by utilizing the Leidenfrost phenomenon. A mist or droplets generated by atomizing raw material solution or by forming droplets of raw material solution is made thermally react to form the epitaxial layer on the base substance.SELECTED DRAWING: Figure 3