| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a data erasure method, capable of improving an operational reliability.SOLUTION: The semiconductor storage device comprises a plurality of memory cell transistors MT, a plurality of word lines WL, and a plurality of NAND strings SR. The word lines WL are commonly connected to the memory cell transistors MT respectively provided on a plurality of layers. The NAND string SR connects the plurality of memory cell transistors MT in the layer, and are stacked on different layers. Data of the memory cell transistors MT adjacent to each other in a direction in which the memory cell transistors MT are stacked and/or in a direction in which the memory cell transistors MT are series connected to each other in the NAND string SR, are erased at timing different from each other.SELECTED DRAWING: Figure 9 |
