| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of preventing proliferation of crystal defects and an optical coupling device.SOLUTION: The semiconductor light emitting element has a semiconductor laminate having a strain quantum well structure-containing light-emitting layer, which includes: a well layer of n layers (n: an integer of 1-10) constituted of In(GaAl)As (in which, 0<x≤0.2, 0<y<1); and a barrier layer of (n+1) layers constituted of GaAlAs (in which, 0<z<1), which are laminated alternately with the well layer. The light-emitting layer emits light which has a peak wavelength of 700-870 nm.SELECTED DRAWING: Figure 3 |
