| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell for storing multilevel data that is less likely to be affected by variations in characteristics of transistors and that is capable of easily writing multilevel data in a shorter time and accurately reading it out.SOLUTION: In writing, a current corresponding to multilevel data is supplied to the transistor in the memory cell and stored as a gate-drain voltage of the transistor in the memory cell. In reading, a current is supplied to the transistor in the memory cell with the stored gate-drain voltage, and the multilevel data is obtained from the voltage supplied to generate a current that is equal to the current.SELECTED DRAWING: Figure 1 |
