ELECTRONIC DEVICE, MANUFACTURING METHOD THEREOF, MANUFACTURING APPARATUS THEREOF

摘要

Provided is an electronic device capable of preventing a deterioration in performance. A TFT (21) is provided with: a channel (14), an IGZO film constituting the channel (14); an etching stop film (22) adjacent to the corresponding channel (14); and a passivation film (23) facing the channel (14) across the etching stop film (22). The passivation film (23) is formed of a fluorine-containing silicon nitride film. A fluorine atom concentration at a boundary of the etching stop film (22) and the channel (14) is higher than a fluorine atom concentration at a part other than the boundary of the channel (14). A fluorine atom concentration distribution at a part other than the boundary of the etching stop film (22) has a concentration gradient declining toward the boundary.