| 摘要 |
PROBLEM TO BE SOLVED: To provide an annealing method of a silicon carbide single crystal capable of mitigating effectively a strain or a stress remaining inside the silicon carbide single crystal, and further a strain or the like in a work-affected layer on the surface.SOLUTION: In an annealing method by heating a silicon carbide single crystal 1 to 2,000°C or higher in an inert gas atmosphere decompressed to 10 Pa or lower, heating is carried out as long as a period of 10 seconds or longer, and below 5 hours by using microwave heating as heating means, to remove a strain or a stress remaining inside the silicon carbide single crystal, and to thereby obtain a flattened silicon carbide single crystal wafer.SELECTED DRAWING: Figure 1 |
