METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device substrate, by which a mask used for ion injection can be easily stripped in a wet system using a stripping solution without damaging a substrate in a method of manufacturing a semiconductor device substrate having a silicon-containing film.SOLUTION: A method of manufacturing a semiconductor device substrate includes the steps of: (1) forming a silicon-containing film having a silicon content of 1 to 30 mass% on an organic underlay film formed on a substrate; (2) forming a resist film on the silicon-containing film; (3) exposing and developing the resist film to form a resist pattern; (4) transferring a pattern to the silicon-containing film by using the resist pattern as a mask; (5) transferring the pattern to the organic underlay film by using the silicon-containing film as a mask while leaving a part of or the whole of the silicon-containing film on the organic underlay film; (6) injecting ions into the substrate by using the organic underlay film as a mask; and (7) stripping the organic underlay film where a part of or the whole of the silicon-containing film used as a mask for ion injection remains, by use of a stripping solution.SELECTED DRAWING: Figure 1