| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu-Ga sputtering target capable of depositing stably a Cu-Ga film having a uniform composition, and containing a comparatively-much alkali metal compound; and to provide a production method of the Cu-Ga sputtering target.SOLUTION: A Cu-Ga sputtering target has a composition containing, as metal components excluding fluorine, Ga: 5 atom% or more and 60 atom % or less and K: 0.01 atom% or more and 5 atom % or less, and having a residue comprising Cu and inevitable impurities. Further, in an atom mapping image by a wavelength separation type X-ray detector, a region including Cu, Ga, K and F exists.SELECTED DRAWING: Figure 2 |
