发明名称 |
QUANTUM WELL STRUCTURE AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a quantum well structure composed of an oxide with a high-potential corundum structure, and to provide a semiconductor device including the quantum well structure.SOLUTION: Provided is a quantum well structure in which a first layer, and a second layer whose main component is a material different from that of the first layer are alternately laminated at least one by one. The main component of the first layer is an oxide having a corundum structure, and the main component of the second layer is a material having a corundum structure. Also provided is a semiconductor device including the quantum well structure.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016051825(A) |
申请公布日期 |
2016.04.11 |
申请号 |
JP20140176651 |
申请日期 |
2014.08.29 |
申请人 |
KOCHI PREFECTURAL PUBLIC UNIVERSITY CORP;FLOSFIA INC |
发明人 |
KAWARAMURA TOSHIYUKI;THAI GIANG DANG;ODA SHINYA;HITORA TOSHIMI |
分类号 |
H01L29/06;C23C16/40;C23C16/448;C30B25/14;C30B29/16;H01L21/368;H01L29/24;H01S5/34 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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