发明名称 QUANTUM WELL STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a quantum well structure composed of an oxide with a high-potential corundum structure, and to provide a semiconductor device including the quantum well structure.SOLUTION: Provided is a quantum well structure in which a first layer, and a second layer whose main component is a material different from that of the first layer are alternately laminated at least one by one. The main component of the first layer is an oxide having a corundum structure, and the main component of the second layer is a material having a corundum structure. Also provided is a semiconductor device including the quantum well structure.SELECTED DRAWING: Figure 3
申请公布号 JP2016051825(A) 申请公布日期 2016.04.11
申请号 JP20140176651 申请日期 2014.08.29
申请人 KOCHI PREFECTURAL PUBLIC UNIVERSITY CORP;FLOSFIA INC 发明人 KAWARAMURA TOSHIYUKI;THAI GIANG DANG;ODA SHINYA;HITORA TOSHIMI
分类号 H01L29/06;C23C16/40;C23C16/448;C30B25/14;C30B29/16;H01L21/368;H01L29/24;H01S5/34 主分类号 H01L29/06
代理机构 代理人
主权项
地址