| 摘要 |
FIELD: technological processes.SUBSTANCE: invention relates to processing monocrystalline CVD-diamond material. Described is a method for introducing NV-centres in monocrystalline CVD-diamond material. One stage of the method involves irradiating the diamond material, which contains a single replacing nitrogen N , for introducing isolated vacancies in the diamond material in the concentration 0.05-1 ppm. Other stage includes annealing irradiated diamond material at temperature of 700-900 °C to form NV-centres from at least some of the defects of single substituent nitrogen and introduced isolated vacancies.EFFECT: this processing of diamond material maximises obtaining of NV-centres, minimising other undesirable defects, which enables to use it in spintronic and associated with colour applications, in particular, for using in fancy pale-rose synthetic precious stones or coloured filters.16 cl, 7 dwg, 12 tbl |
