| 摘要 |
FIELD: instrument making.SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of bipolar transistors with low leakage currents. In method of making semiconductor device base region is formed by boron diffusion from anodic oxide films in silicon at temperature 1473 K for 90 minutes in a stream of nitrogen 1.2·10l/s.EFFECT: invention ensures reduction of leakage current values, high technological effectiveness, improved parameters of devices, higher reliability and percentage yield.1 cl, 1 tbl |
