| 摘要 |
The present invention relates to a thin film transistor substrate, a manufacturing method thereof, and a display device using the same. According to an embodiment of the present invention, the thin film transistor includes: a shielding layer, a source electrode, and a drain electrode which are formed at the same layer on a substrate; an active layer which overlaps the shielding layer, the source electrode, and the drain electrode; a gate insulation film which is formed on the active layer; a first gate electrode which is formed on the gate insulation film; an interlayer insulation film which is formed on the first gate electrode; a first connection electrode connected to the active layer and the source electrode, and a second connection electrode connected to the active layer and the drain electrode which are formed on the interlayer insulation film; a flattening layer which is formed on the first connection electrode and the second connection electrode; and a pixel electrode connected to the second connection electrode which is formed on the flattening layer. |
