发明名称 |
ATOMIC LAYER JUNCTION OXIDE AND PREPARING METHOD THEREOF |
摘要 |
The present invention relates to an atomic layer conjugated oxide, a manufacturing method of the atomic layer conjugated oxide, and a photoelectric conversion layer including the atomic layer conjugated oxide. The atomic layer conjugated oxide is formed by alternately stacking an n-type doped atomic layer oxide, a p-type doped atomic layer oxide, and a genuine atomic layer oxide. |
申请公布号 |
KR101610895(B1) |
申请公布日期 |
2016.04.08 |
申请号 |
KR20150093549 |
申请日期 |
2015.06.30 |
申请人 |
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
LEE, JAI CHAN;CHUNG, BONG WOOK |
分类号 |
H01L31/04;H01L31/02;H01L31/0272 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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