发明名称 |
XMR-SENSOR AND METHOD FOR MANUFACTURING THE XMR-SENSOR |
摘要 |
An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area. |
申请公布号 |
US2016097827(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201514969378 |
申请日期 |
2015.12.15 |
申请人 |
Infineon Technologies AG |
发明人 |
Zimmer Juergen |
分类号 |
G01R33/09 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
1. An XMR-sensor, comprising:
a substrate having a first main surface area and a second, different main surface area; an XMR-structure comprising at least one section that extends along a first direction perpendicular to the first main surface area or the second main surface area such that an XMR-plane of the XMR-structure is arranged in the first direction; a first contact and a second contact arranged to contact the at least one section of the XMR-structure at different locations of the XMR-structure; and a current conductor configured to conduct a current therethrough, and generate a magnetic field parallel to the XMR-plane of the XMR-structure in response to the conducting current. |
地址 |
Neubiberg DE |