发明名称 XMR-SENSOR AND METHOD FOR MANUFACTURING THE XMR-SENSOR
摘要 An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.
申请公布号 US2016097827(A1) 申请公布日期 2016.04.07
申请号 US201514969378 申请日期 2015.12.15
申请人 Infineon Technologies AG 发明人 Zimmer Juergen
分类号 G01R33/09 主分类号 G01R33/09
代理机构 代理人
主权项 1. An XMR-sensor, comprising: a substrate having a first main surface area and a second, different main surface area; an XMR-structure comprising at least one section that extends along a first direction perpendicular to the first main surface area or the second main surface area such that an XMR-plane of the XMR-structure is arranged in the first direction; a first contact and a second contact arranged to contact the at least one section of the XMR-structure at different locations of the XMR-structure; and a current conductor configured to conduct a current therethrough, and generate a magnetic field parallel to the XMR-plane of the XMR-structure in response to the conducting current.
地址 Neubiberg DE