发明名称 |
PARYLENE DEPOSITION PROCESS |
摘要 |
Embodiments of the disclosure generally related to methods of depositing parylene. The methods include introducing a first precursor into a processing chamber, and photolysing the first precursor into a second precursor using ultraviolet radiation. The second precursor is introduced into second and third regions of the processing chamber, separated by respective first and second showerheads. A substrate is exposed to the second precursor in the third region of the processing chamber to facilitate deposition of a parylene film on the substrate. |
申请公布号 |
US2016096193(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201414505553 |
申请日期 |
2014.10.03 |
申请人 |
Applied Materials, Inc. |
发明人 |
CHAN Kelvin |
分类号 |
B05D1/00;B05C9/12;B05C9/14;B05B1/18;B05C9/10 |
主分类号 |
B05D1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of depositing parylene, comprising:
introducing a first precursor into a first region of processing chamber; exposing the first precursor to ultraviolet radiation to cause photolysis of the first precursor into a second precursor; flowing the second precursor into a second region of the processing chamber, the second region separated from the first region by a first showerhead; flowing the second precursor into a third region of the processing chamber, the third region separated from the second region by a second showerhead; and exposing a substrate within the third region to the second precursor to form a parylene film on the substrate. |
地址 |
Santa Clara CA US |