发明名称 PARYLENE DEPOSITION PROCESS
摘要 Embodiments of the disclosure generally related to methods of depositing parylene. The methods include introducing a first precursor into a processing chamber, and photolysing the first precursor into a second precursor using ultraviolet radiation. The second precursor is introduced into second and third regions of the processing chamber, separated by respective first and second showerheads. A substrate is exposed to the second precursor in the third region of the processing chamber to facilitate deposition of a parylene film on the substrate.
申请公布号 US2016096193(A1) 申请公布日期 2016.04.07
申请号 US201414505553 申请日期 2014.10.03
申请人 Applied Materials, Inc. 发明人 CHAN Kelvin
分类号 B05D1/00;B05C9/12;B05C9/14;B05B1/18;B05C9/10 主分类号 B05D1/00
代理机构 代理人
主权项 1. A method of depositing parylene, comprising: introducing a first precursor into a first region of processing chamber; exposing the first precursor to ultraviolet radiation to cause photolysis of the first precursor into a second precursor; flowing the second precursor into a second region of the processing chamber, the second region separated from the first region by a first showerhead; flowing the second precursor into a third region of the processing chamber, the third region separated from the second region by a second showerhead; and exposing a substrate within the third region to the second precursor to form a parylene film on the substrate.
地址 Santa Clara CA US