| 摘要 |
The invention describes an optoelectronic semiconductor chip (1) having a semiconductor layer sequence (2) and a carrier substrate (10), wherein the semiconductor layer sequence (2) has a first semiconductor region (5) of a first conduction type, a second semiconductor region (3) of a second conduction type, and an active layer (4) arranged between the first semiconductor region (5) and the second semiconductor region (3), and wherein the first semiconductor region (5) faces towards the carrier substrate (10). The semiconductor layer sequence (2) has first recesses (11), which are formed in the first semiconductor region (5) and do not sever the active layer (4), and second recesses (12), which at least partially sever the first semiconductor region (5) and the active layer (4), wherein the second recesses (12) adjoin a first recess (11) or are arranged between two first recesses (12). Furthermore, a method for producing the optoelectronic semiconductor chip (1) is specified. |
