A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.
申请公布号
WO2016053629(A1)
申请公布日期
2016.04.07
申请号
WO2015US50473
申请日期
2015.09.16
申请人
SUNEDISON SEMICONDUCTOR LIMITED;RAPOPORT, IGOR
发明人
RAPOPORT, IGOR;CREPIN, ROBERT JAMES;TAYLOR, PATRICK ALAN