发明名称 SURFACE PHOTOVOLTAGE CALIBRATION STANDARD
摘要 A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.
申请公布号 WO2016053629(A1) 申请公布日期 2016.04.07
申请号 WO2015US50473 申请日期 2015.09.16
申请人 SUNEDISON SEMICONDUCTOR LIMITED;RAPOPORT, IGOR 发明人 RAPOPORT, IGOR;CREPIN, ROBERT JAMES;TAYLOR, PATRICK ALAN
分类号 G01R35/00;G01R31/26 主分类号 G01R35/00
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