COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE, AND PATTERNING PROCESS

摘要

A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.;

主权项

1. A composition for forming a coating type BPSG film, comprising:
one or more silicic acid skeletal structures represented by the formula (1); one or more phosphoric acid skeletal structures represented by the formula (2); one or more boric acid skeletal structures represented by the formula (3); and one or more silicon skeletal structures represented by the formula (4); wherein the composition contains a coupling between units in the formula (4),wherein R1, R2, R3, R4, R5, R6, R7, and R8 each represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); R9, R10, R11, R12, R13, and R14 each represent a methyl group, a phenyl group, or a hydroxyl group; m10, m11, m12, and m13 each represent a molar fraction in the silicic acid skeletal structure, and satisfy m10+m11+m12+m13=1, 0≦m10≦0.3, 0≦m11≦0.5, 0≦m12≦0.7, and 0