| 摘要 |
A semiconductor device is described that includes an integrated circuit (500) coupled to a first semiconductor substrate (100) with a first set of passive devices (e.g., inductors) (102) on the first substrate. A second semiconductor substrate (200) with a second set of passive devices (e.g., capacitors) (202) may be coupled to the first substrate. Interconnects (104) in the substrates may allow interconnection between the substrates and the integrated circuit. The passive devices may be used to provide voltage regulation for the integrated circuit. The substrates and integrated circuit may be coupled using metallization (106,502). |
