SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and a manufacturing method of the semiconductor device which manufactures the semiconductor device with high yield to achieve high productivity.SOLUTION: In a semiconductor device having a transistor in which a source electrode layer and a drain electrode layer are provided in contact with a surface of an oxide semiconductor film, contamination of an impurity into a lateral face end of the oxide semiconductor film and occurrence of oxygen deficiency are inhibited. Because of this, a parasitic channel is formed at the lateral face end of the oxide semiconductor film thereby to prevent variation in electrical characteristics of the transistor.SELECTED DRAWING: Figure 1