| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can ensure refinement and reliability.SOLUTION: A semiconductor device comprises: a semiconductor substrate 10; a cylinder interlayer film 16 which is arranged in a memory cell area MA and composed of a silicon film; a peripheral embedded insulation film 18 arrange so as to encompass the cylinder interlayer film 16; a mask insulation film 19 arranged on a top face of the cylinder interlayer film; a first capacitative insulation film 21 arranged to cover an internal surface of a first cylinder hole 20 which is formed by piercing the mask insulation film and the cylinder interlayer film to form a second cylinder hole; a bottomed and cylindrical lower electrode 22 having a lateral surface which contacts an internal surface of the second cylinder hole; a second capacitative insulation film 23 which covers an inner surface of the lower electrode to form a third cylinder hole; an upper electrode 24 which covers a surface of the second capacitative insulation film and embeds the third cylinder hole; and a plate electrode 25 which is arranged in a whole area of the memory cell area and directly contacts a predetermined area of a top face 24u of the cylinder interlayer film 16.SELECTED DRAWING: Figure 1 |
