| 发明名称 |
ULTRATHIN FILM RESISTIVE MEMORY DEVICES |
| 摘要 |
Provided are thin resistive devices and related methods, the devices featuring a resistance-switchable active layer having a thickness in the range of from about 1 to about 5 nm and an insulating layer surmounting the resistance-switchable active layer, the insulating layer having a thickness in the range of from about 0.5 nm to about 5 nm. |
| 申请公布号 |
US2016099409(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201414507957 |
申请日期 |
2014.10.07 |
| 申请人 |
The Trustees of the University of Pennsylvania |
发明人 |
Chen I-Wei;Lee Jongho |
| 分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive device, comprising:
a resistance-switchable active layer having a thickness in the range of from about 1 to about 5 nm; and an insulating layer surmounting the resistance-switchable active layer, the insulating layer having a thickness in the range of from about 0.5 nm to about 5 nm. |
| 地址 |
Philadelphia PA US |
