NON-VOLATILE SEMICONDUCTOR MEMORY WITH HIGH RELIABILITY AND DATA ERASING METHOD THEREOF

摘要

A non-volatile semiconductor memory apparatus and a data erasing method thereof are provided to suppress deterioration in reliability due to data rewriting. An erasing method of a flash memory is provided, which includes the following steps. A control gate is maintained at 0V, a high-voltage erase pulse is applied to a P well, such that electrons is emitted from a floating gate to the P well. Then, the control gate is again maintained, and a weak erase pulse with a voltage lower than the erase pulse is applied to the P well.

主权项

1. A data erasing method of a non-volatile semiconductor memory apparatus, wherein memory cells are formed in the non-volatile semiconductor memory apparatus, and each of the memory cells comprises a control gate, a charge accumulation layer and a channel region, the data erasing method comprising:
after maintaining the control gate at a fixed voltage and applying a high-voltage erase pulse to the channel region, so as to emit electrons from the charge accumulation layer to the channel region, maintaining the control gate at the fixed voltage and applying a weak pulse with a voltage lower than the voltage of the erase pulse applied to the channel region.