NON-VOLATILE MEMORY AND METHOD WITH ADJUSTED TIMING FOR INDIVIDUAL PROGRAMMING PULSES

摘要

A non-volatile memory and method have programming circuitry that outputs a series of programming pulses of increasing voltage level to program in parallel a group of memory cells associated with a selected word line. Individual timing of the programming pulses such as rise and fall times of the pulse is optimally and dynamically adjusted according to the relative numbers of program-enabled and program-inhibited memory cells in the group associated with that pulse.

主权项

1. A non-volatile memory comprising:
an array of memory cells; a plurality of word lines and bit lines for accessing said array of memory cells; a programming circuit for programming a group of memory cells in parallel; said programming circuit further comprising: word line driver circuitry for providing a programming voltage through a selected word line to the group of memory cells, the programming voltage being a series of pulses having increasing voltage levels; the group having a number of program-enabled and program-inhibited memory cells that varies dynamically with each pulse; and said word line driver circuitry including a control module to adjust an individual timing of a pulse, responsive to relative numbers of program-enabled and program-inhibited memory cells in the group associated with the pulse.