| 发明名称 |
SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIAL |
| 摘要 |
An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100−x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories. |
| 申请公布号 |
US2016099050(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201514966348 |
申请日期 |
2015.12.11 |
| 申请人 |
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
发明人 |
WU Liangcai;ZHU Min;SONG Zhitang;RAO Feng;PENG Cheng;ZHOU Xilin;REN Kun;FENG Songlin |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. An Sb—Te—Ti phase-change memory material for a phase-change memory, formed by doping an Sb—Te phase-change memory material with Ti, and having a chemical formula of SbxTeyTi100-x-y, wherein 45≦x≦72, and y=x/2. |
| 地址 |
Shanghai CN |
