FIELD-EFFECT TRANSISTOR WITH OPTIMISED MIXED DRAIN CONTACT AND MANUFACTURING METHOD

摘要

The invention relates to a field-effect transistor comprising a substrate and a semi-conductor structure having a channel area, said transistor comprising a drain contact, a source contact and a gate, said source and drain contacts making it possible to generate a flow of charge carriers in the channel area, said flow being controlled by said gate, characterised in that: said drain contact is a mixed drain contact comprising at least one elementary ohmic continuous drain contact (CDoh) and an elementary Schottky drain contact (CDSch), said mixed drain contact being flush with said semiconductor structure; said elementary Schottky drain contact (CDSch) partially or completely overlapping said elementary ohmic drain contact (CDoh). The invention also relates to a method for manufacturing said transistor.