| 摘要 |
The present disclosure pertains to a solid-state imaging element, production method, and electronic device that make it possible to suppress image degradation and enhance image quality. A solid-state imaging element is provided with a semiconductor substrate on which photodiodes for carrying out photoelectric conversion are provided for each of a plurality of pixels, color filters that are laminated on the light incidence surface of the semiconductor substrate and transmit light of colors corresponding to each of the pixels, and light-blocking film that is provided between the color filters for each pixel and is formed through the lamination of a first light-blocking film and second light-blocking film that use two different types of materials. Further, a light-blocking metal is used for the first light-blocking film and a photosensitive resin is used for the second light-blocking film. This technology can be applied, for example, to a back-illuminated CMOS image sensor. |
