| 摘要 |
Disclosed is a semiconductor memory device. The semiconductor memory device comprises: first memory chips stacked on top of each other, and electrically connected through the first TSVs; second memory chips stacked separately from the first memory chips, and electrically connected through a plurality of second TSVs; and a plurality of external connecting electrodes shared with the first memory chips and the second memory chips. The first and second memory chips may be configured such that one of the first and second memory chips is accessed by responding to a chip selection signal input from the outside through the external connecting electrodes. |
