发明名称 |
RESIST PATTERN-FORMING METHOD |
摘要 |
A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent. |
申请公布号 |
US2016097978(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201514877357 |
申请日期 |
2015.10.07 |
申请人 |
JSR Corporation |
发明人 |
ANNO Yusuke;MORI Takashi;SAKAKIBARA Hirokazu;FURUKAWA Taiichi;TAKANASHI Kazunori;TANAKA Hiromitsu;MINEGISHI Shin-ya |
分类号 |
G03F7/32;G03F7/20 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |