| 摘要 |
There is presented an n-type semiconductor which may be useful as a TCO material : gallium doped zinc cadmium oxide (which may be interchangeably referred to as: Ga-doped ZnCdO) with the general formula Zn1-x-yCdxGayO, where x and y may in a particular embodiment be given by, e.g., 0.05<x<0.15, 0.006<y<0.04. The semiconductor has excellent high transparency, with minor light absorption over the solar spectra, and high electrical conductivity, and may be provided in a relatively cost effective manner, and may furtermore be seen as less costly, and/or more stable and/or having lower resistivity and/or being more transparent, and optionally being depositable at room temperature, compared to known materials. The material has been successfully synthesized and tested in the laboratory. |
