DUAL-SIDE INTERCONNECTED CMOS FOR STACKED INTEGRATED CIRCUITS

摘要

PROBLEM TO BE SOLVED: To provide a stacked integrated circuit (IC) which may be manufactured with a second tier wafer bonded to a double-sided first tier wafer.SOLUTION: A double-sided first tier wafer includes back-end-of-line (BEOL) layers on a front and a back side of the wafer. Extended contacts within the first tier wafer connect the front side and the back side BEOL layers. The extended contacts extend through a junction of the first tier wafer. The second tier wafer couples to the front side of the first tier wafer through the extended contacts. Additional contacts couple devices within the first tier wafer to the front side BEOL layers. When double-sided wafers are used in stacked ICs, the height of the stacked ICs may be reduced. The stacked ICs may include wafers of identical functions or wafers of different functions.SELECTED DRAWING: Figure 3G