| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device which achieves high mobility and high reliability in a device using an oxide semiconductor.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming an oxide semiconductor layer having a crystalline region where a c-axis is oriented in a direction substantially perpendicular to a surface; forming an oxide insulation layer on the oxide semiconductor layer in contact with the oxide semiconductor layer; performing a third heat treatment to supply oxygen to the oxide semiconductor layer to form a hydrogen-containing nitride insulation layer on the oxide insulation layer; and performing a fourth heat treatment to supply hydrogen to an interface between at least the oxide semiconductor layer and the oxide insulation layer.SELECTED DRAWING: Figure 3 |
