发明名称 |
A NON-VOLATILE SPLIT GATE MEMORY DEVICE AND A METHOD OF OPERATING SAME |
摘要 |
A non- volatile memory device that a semiconductor substrate of a first conductivity type. An array of non- volatile memory cells is in the semiconductor substrate arranged in a plurality of rows and columns. Each memory cell comprises a first region on a surface of the semiconductor substrate of a second conductivity type, and a second region on the surface of the semiconductor substrate of the second conductivity type. A channel region is between the first region and the second region. A word line overlies a first portion of the channel region and is insulated therefrom, and adjacent to the first region and having little or no overlap with the first region. A floating gate overlies a second portion of the channel region, is adjacent to the first portion, and is insulated therefrom and is adjacent to the second region. A coupling gate overlies the floating gate. A bit line is connected to the first region. A negative charge pump circuit generates a first negative voltage. A control circuit receives a command signal and generates a plurality of control signals, in response thereto and applies the first negative voltage to the word line of the unselected memory cells. During the operations of program, read or erase, a negative voltage can be applied to the word lines of the unselected memory cells. |
申请公布号 |
WO2016053607(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
WO2015US50010 |
申请日期 |
2015.09.14 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
TRAN, HIEU, VAN;NGUYEN, HUNG, QUOC;DO, NHAN |
分类号 |
G11C16/04;G11C16/12 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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