| 摘要 |
PROBLEM TO BE SOLVED: To reduce manufacturing cost of a semiconductor device having rewiring lines; and improve reliability of a semiconductor device having rewiring lines.SOLUTION: A semiconductor device in an embodiment 1 has features that an opening OP2 and a rewiring groove WD are integrally formed in a single-layer polyimide resin film PI as shown in the selection figure. Since this makes it possible to form rewiring lines RDL in a single-layer polyimide resin film PI, migration of a wiring line material (silver) which composes the rewiring lines RDL can be inhibited.SELECTED DRAWING: Figure 5 |
