FAST SECURE ERASE IN A FLASH SYSTEM

摘要

A flash memory controller is configured to provide a first erase mode for erasing one or more groups of flash memory cells in a flash memory device using a plurality of erase pulses and a second erase mode for erasing the one or more groups of flash memory cells using a single erase pulse. The controller may receive a fast erase signal to erase the one or more groups of flash memory cells and, in response to the signal, switch operating parameters of the flash memory device from first parameters corresponding to the first erase mode to second parameters corresponding to the second erase mode, and instruct the flash memory device to perform an erase operation on the one or more groups of flash memory cells according to the second parameters. The controller may then verify that the erase operation was completed using the single erase pulse.

主权项

1. A method for erasing information stored in a flash memory device, comprising:
receiving a fast erase signal to erase one or more groups of flash memory cells in the flash memory device; switching, by a flash memory controller, operating parameters of the flash memory device from first parameters corresponding to a first erase mode to second parameters corresponding to a second erase mode based on receiving the fast erase signal, the first erase mode for erasing the one or more groups of flash memory cells using a plurality of erase pulses and the second erase mode for erasing the one or more groups of flash memory cells using a single erase pulse, wherein an erase operation in the first erase mode is an incremental stepping pulse erase operation and the flash memory device is configured to perform the erase operation in the first erase mode by default; and instructing the flash memory device to perform an erase operation to erase the one or more groups of flash memory cells according to the second parameters.