| 发明名称 |
WORKPIECE PROCESSING METHOD |
| 摘要 |
Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container. In the processing method, a sequence including the first to fourth processes is repeated. |
| 申请公布号 |
US2016099131(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201514866467 |
申请日期 |
2015.09.25 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KIHARA Yoshihide;HISAMATSU Toru;HONDA Masanobu |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A workpiece processing method including:
a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container, wherein a sequence including the first process to the fourth process is repeated. |
| 地址 |
Tokyo JP |
