发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes memory strings each including a drain select transistor, memory cells and a source select transistor, which are connected between a bit line and a common source line and suitable for operating based on voltages applied to a drain select line, word lines and a source select line, respectively, and an operation circuit suitable for performing a pre-program operation, an erase operation and a post-program operation on the memory strings. The operation circuit sequentially performs erase operations on the drain select transistors included in the memory strings. |
申请公布号 |
US2016099063(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201514619953 |
申请日期 |
2015.02.11 |
申请人 |
SK hynix Inc. |
发明人 |
SHIM Jung Woon |
分类号 |
G11C16/14;G11C16/04;G11C16/34 |
主分类号 |
G11C16/14 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
memory strings each including a drain select transistor, memory cells and a source select transistor, which are connected between a bit line and a common source line and suitable for operating based on voltages applied to a drain select line, word lines and a source select line, respectively; and an operation circuit suitable for performing a pre-program operation, an erase operation and a post-program operation on the memory strings, wherein the operation circuit sequentially performs erase operations on the drain select transistors included in the memory strings. |
地址 |
Gyeonggi-do KR |