| 摘要 |
The present disclosure concerns a self-referenced MRAM cell (1) comprising a reference layer(23) having a fixed reference magnetization (230), a sense layer (21) having a free sense magnetization (210),a tunnel barrier (22), a biasing layer (25) having bias magnetization (250) and a biasing antiferromagnetic layer (27) pinning the bias magnetization (250) in a bias direction when MRAM cell (1) is at temperature equal or below a bias threshold temperature (TB); the bias magnetization (250) being arranged for inducing a bias field (251) adapted for biasing the sense magnetization (210) in a direction opposed to the bias direction, such that the biased sense magnetization (210) varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization (230). The present disclosure further concerns a magnetic field sensor (100) comprising a plurality of the self-referenced MRAM cell (1) and a method for programming the magnetic field sensor. |
