| 摘要 |
A power semiconductor device and a manufacturing method therefor. The power semiconductor device comprises a substrate (12), a core forming layer (13), a buffering layer (14), a channel layer (15), a barrier layer (16), a source (17), a drain (20), a gate (18), and a junction termination structure (19) located on the barrier layer. The junction termination structure extends to the drain in the direction from the edge of the gate close to one side of the drain. The lattice constant of the junction termination structure is greater than the lattice constant of the barrier layer. Due to the piezoelectric effect caused by the lattice constant difference between the junction termination structure and the barrier layer under the junction termination structure, two-dimensional electronic gas at the position of the interface of the barrier layer and the channel layer is partially exhausted. The junction termination structure can effectively improve the electric field distribution of the barrier layer and improve the breakdown voltage of the device. |
