| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device superior in yield.SOLUTION: A semiconductor device 10 comprises: a base material (die pad 2); a semiconductor element 3; and an adhesive layer 1 interposed between the base material and the semiconductor element 3 and gluing them. The adhesive layer 1 includes a thermally conductive filler 8. The semiconductor device 10 is characterized as follows. The thermally conductive filler 8 is dispersed in the adhesive layer 1, and the following conditions are satisfied: C1>C; and C2>C, where C represents a content of the thermally conductive filler 8 in the whole adhesive layer 1; C1 represents a content of the thermally conductive filler 8 in a region 1 ranging from an interface of the adhesive layer 1 located on the side of the semiconductor element 3 to a depth of 2 μm; and C2 represents a content of the thermally conductive filler 8 in a region 2 ranging from an interface of the adhesive layer 1 located on the side of the base material (die pad 2) to a depth of 2 μm.SELECTED DRAWING: Figure 1 |
