INTEGRATED CIRCUIT DEVICES HAVING THROUGH-SILICON VIAS AND METHODS OF MANUFACTURING SUCH DEVICES

摘要

An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.

主权项

1. An integrated circuit device comprising:
a semiconductor structure; a through-silicon-via (TSV) structure that extends in a first direction and that penetrates through the semiconductor structure; a connection terminal on the semiconductor structure, the connection terminal including an upper surface that is electrically connected to the TSV structure, a bottom surface that is opposite the upper surface, and a side wall that extends between the bottom surface and the upper surface; and a metal capping layer that includes a flat capping portion that covers the bottom surface of the connection terminal, and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers the side wall of the connection terminal.