DIMENSION-CONTROLLED VIA FORMATION PROCESSING

摘要

Methods are provided for dimension-controlled via formation over a circuit structure, including over multiple adjacent conductive structures. The method(s) includes, for instance, providing a patterned multi-layer stack structure above the circuit structure, the stack structure including at least one layer, and a pattern transfer layer above the at least one layer, the pattern transfer layer being patterned with at least one via opening; providing a sidewall spacer layer within the at least one via opening to form at least one dimension-controlled via opening; and etching through the at least one layer of the stack structure using the at least one dimension-controlled via opening to facilitate providing the via(s) over the circuit structure. In one implementation, the stack structure includes a trench-opening within a patterned hard mask layer disposed between a dielectric layer and a planarization layer, and the via(s) is partially self-aligned to the trench.

主权项

1. A method comprising:
forming at least one via over a circuit structure, the forming comprising:
providing a patterned multi-layer stack structure above the circuit structure, the patterned multi-layer stack structure comprising at least one layer, and a pattern transfer layer above the at least one layer, the pattern transfer layer being patterned with at least one via opening therein;providing a sidewall spacer layer within the at least one via opening to form at least one dimension-controlled via opening; andetching through at least the at least one layer of the patterned multi-layer stack structure using the at least one dimension-controlled via opening to facilitate providing the at least one via over the circuit structure: andwherein the etching through the at least one layer of the patterned multi-layer stack structure using the at least one dimension-controlled via opening is partially blocked by a patterned hard mask layer in a first direction, limiting width of the at least one dimension-controlled via opening in the first direction at a bottom of the at least one layer, and wherein width of the at least one dimension-controlled via opening in a second direction, transverse to the first direction, is controlled at the bottom of the at least one layer by a thickness of the provided sidewall spacer layer within the at least one via opening.